Fang Xiaodong's research group, a researcher at the Laser Technology Center of the Anhui Institute of Optics and Fine Mechanics, Hefei Institute of Physical Sciences, Chinese Academy of Sciences, has made new progress in using excimer laser technology to improve the performance of perovskite solar cells (PSCs). PSCs have developed rapidly since they were first reported in 2009. At present, their photoelectric conversion efficiency has surpassed that of polycrystalline silicon solar cells, reaching 24.2%, which has great application prospects. The organic-inorganic hybrid perovskite film of the light-absorbing layer of PSCs is usually prepared by solution method at low temperature (<150°C). It can construct both rigid solar cells and has the natural advantage of developing flexible solar cells. However, there will be a large number of defects on the surface of perovskite films prepared by solution methods, causing the recombination of photogenerated carriers and hindering further improvement of battery performance. At the same time, the current preparation process of the electron transport layer commonly used in PSCs requires annealing and crystallization at a temperature of 400~500°C. This temperature exceeds the temperature that commonly used flexible substrates can withstand, restricting the development of flexible PSCs. In view of the above existing problems, combined with the characteristics of excimer laser photon energy, large single pulse energy, short pulse time, large spot area, uniform energy distribution and small thermal effect, the research group introduced excimer laser technology into the research of PSCs. Excimer laser irradiation effectively reduces the surface defect concentration of the perovskite film and enables low-temperature excimer laser annealing of the electron transport layer. Associate researcher Wang Shimao and doctoral student Shan Xueyan of this research group used 248nm (KrF) excimer laser to irradiate the CH3NH3PbI3 film to modify its surface. The defect concentration of the modified CH3NH3PbI3 film dropped from 1.61×1016cm-3 to 5.81×1015cm-3. The transient fluorescence lifetime test showed that the non-radiative recombination of photogenerated carriers in the film under illumination was effectively suppressed, and the photoelectric conversion efficiency of the battery was improved. It has also been significantly improved. Relevant research results were published in SolarRRL, a sub-issue of Advanced Materials magazine, titled "Rapid surface modification of CH3NH3PbI3 thin films using 248nm KrF excimer laser to enhance perovskite solar cell performance." Associate researcher Dong Weiwei and doctoral student Xia Rui of this research group applied excimer laser annealing (ELA) technology to the preparation of PSCs electron transport layer for the first time, using 308nm (XeCl) excimer laser to gallium prepared by magnetron sputtering. The doped zinc oxide (GZO) electron transport layer is annealed. After ELA treatment, the crystallinity, transmittance and conductivity of the GZO film, as well as the photoelectric conversion efficiency and stability of PSCs based on it, were significantly improved. The relevant results were published on RSC Advances under the title "Excimer Laser Annealing of Ga-Doped ZnO Electron Transport Layer in Perovskite Solar Cells".

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