On May 22, London time, a paper published in Nature magazine stated that scientists and collaborators from Peking University used a central inversion symmetry-breaking substrate to successfully realize decimeter-scale two-dimensional hexagonal boron nitride monomers for the first time. Epitaxial preparation of crystals. This is another major development in the field of single crystal growth of two-dimensional materials after the successful preparation of meter-scale graphene single crystals. The rise of 2D materials has opened up huge possibilities for potential applications in electronics, optoelectronics and photovoltaics as they offer smaller sizes, higher speeds and newer functionalities. The preparation of large-area, high-quality basic two-dimensional single crystal materials (two-dimensional conductor graphene, two-dimensional semiconductor transition metal chalcogenides, black phosphorus, etc., and two-dimensional insulator hexagonal boron nitride) is the key to the large-scale application of two-dimensional devices. Core. Among them, hexagonal boron nitride (hBN) has excellent stability, smooth surface and no dangling bonds, and is the best known two-dimensional insulator. However, the size of single crystal two-dimensional hexagonal boron nitride has always been a huge challenge in the field of nanomaterials, mainly because the epitaxial growth of the three-fold symmetric hexagonal boron nitride lattice on the surface of conventional metal substrates will produce reverse crystal domains, resulting in A large number of defective grain boundaries are generated. After years of research, Peking University's Liu Kaihui research group and collaborators found that through a special annealing process, industrial copper foil can be transformed into an "adjacent crystal plane" with a certain inclination angle to the (110) crystal plane, and achieve 10 Epitaxial growth of ×10cm2 single crystal hexagonal boron nitride monolayer film. The results of various characterization methods and theoretical calculations show that the key to epitaxial growth is Cu. Previously, it has been difficult to achieve large-scale single crystal preparation for most two-dimensional materials composed of two elements. The successful research of this paper will provide reference for the preparation of other two-dimensional materials. Wang Li, Xu Xiaozhi, Zhang Leining, and Qiao Ruixi are the co-first authors of the paper, and Liu Kaihui, Ding Feng, Wang Zhujun, and Bai Xuedong are the corresponding authors of the paper. Other collaborators on this paper include: Wang Enge, Yu Dapeng, Jiang Ying, Zhang Yi, Wu Shiwei, Gao Peng, Wang Wenlong, Li Qunyang, Wu Hui, Marc Willinger, etc.

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